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Exchange interactions in strained quantum dot arrays and possibility of engineering their magnetic properties

Authors
Journal
Superlattices and Microstructures
0749-6036
Publisher
Elsevier
Publication Date
Volume
24
Issue
2
Identifiers
DOI: 10.1006/spmi.1998.0579
Keywords
  • Quantum Dots
  • Magnetism
Disciplines
  • Engineering
  • Physics

Abstract

Abstract Exchange interactions between the holes confined in arrays of strained quantum dots subject to compressive and tensile strain are shown to lead to a ferrimagnetic arrangement of magnetic moments. Using the example of strained In x Ga 1 − x As quantum dots on InP substrate it is shown how the magnetic properties of semiconductor material can be engineered without resorting to doping with magnetic ions. The transition temperature is estimated to be of the order of 25 K. Potential applications in information storage and processing are considered.

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