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Laser-assisted growth of thin films of CuAlSe2

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
194
Issue
3
Identifiers
DOI: 10.1016/0039-6028(88)90128-8

Abstract

Abstract Thin films of CuAlSe 2 have been formed by a laser beam interaction process and analyzed with optical and Auger spectroscopies. It has been found that at low incident power (8.4 W/cm 2) of the argon ion laser (all lines) the compound is formed together with another binary such as Cu 2Se. As the power increases, the second phase disappears and, at 11.7 W/cm 2, reasonably good quality thin films are obtained. It is worth pointing out that the films formed by this technique show defects which need to be eliminated before using them for non-linear optical devices.

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