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Photoeffects in junction field effect transistors under strong illumination

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
15
Issue
11
Identifiers
DOI: 10.1016/0038-1101(72)90046-9

Abstract

Abstract At sufficiently strong homogeneous illumination, an internal junction region acquires a forward bias voltage, such that the resulting gate junction leakage current compensates the primary junction photocurrent. This region spreads towards source and drain with increasing illumination intensity, resulting in source and drain currents which increase in proportion to the square root of light intensity.

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