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MOS Gate Driver Circuit with Extremely High Galvanic Isolation

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Publications mainResearchArea.mainResearchArea externalPublication persons[0].person.id persons[0].person.employeeId persons[0].personRole persons[0].firstName persons[0].lastName persons[0].organisations title owner.id owner.owner typeClassification.typeClassification publicationStatus.publicationStatus publicationDate.year uuid id created modified modifiedBy creator remoteOrigin sourceLicensesDismissed Source: orbit visibility language.language acceptedDuplicate submissionYear publicationCategory.publicationCategory peerReview workflowInformations[0] markedForRevalidation publisher.id publisher.name publisher.volume hostPublicationTitle event.id event.event Technical/natural sciences 2187253 4801 Author Michael Andreas E. Andersen Department of Applied Electronics, Department of Automation, Department of Electrical Engineering, Electronics MOS Gate Driver Circuit with Extremely High Galvanic Isolation 3674 Automation - Former organisational unit. 25/08/09. Article in proceedings Published 1995 712e72b4-74a7-40f5-8ddb-77b838165b34 2706508 2/26/12 2/26/12 soeren soeren 201898 FREE English 1995 Research created 2702989 EPE 1 EPE 1995 2706503 EPE 1995 : 01/01/95

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