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Tunnel characteristics of partially gapped non-superconducting metals with charge- or spin-density waves

Authors
Journal
Physics Letters A
0375-9601
Publisher
Elsevier
Publication Date
Volume
223
Issue
3
Identifiers
DOI: 10.1016/s0375-9601(96)00687-1
Keywords
  • Condensed Matter
Disciplines
  • Physics

Abstract

Abstract Current-voltage characteristics for symmetrical and non-symmetrical tunnel junctions involving non-superconducting partially dielectrized metals are calculated. Root singularities at eV = ± Σ and jumps at eV = ±2 Σ, where V is the bias voltage, Σ is the dielectric gap, and e is the elementary charge, are obtained for symmetrical junctions. For non-symmetrical ones current-voltage characteristics are non-symmetrical and depend on the sign of Σ. The results obtained agree qualitatively with tunnel and point-contact measurements for layered dichalcogenides, NbSe 3, and URu 2Si 2.

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