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Relation between electrical conductivity and structural characteristics in boron-doped LPCVD polycrystalline silicon used in sensor devices

Authors
Journal
Sensors and Actuators A Physical
0924-4247
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/0924-4247(93)80014-8

Abstract

Abstract The electrical conductivity and its temperature dependence of boron-doped polycrystalline silicon have been analyzed. Correlations between electrical conductivity and processing conditions are reported based on microstructural considerations supported by TEM, X-ray diffraction and Raman spectroscopy. The structural differences induced by the deposition conditions decrease with the ion implantation process due to the induced damage. The increase in electrical conductivity observed for all samples with the annealing temperature is due to both the enlargement of the grain size and the increase of the effective doping of the grains.

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