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Base widening into the emitter region of anN +NPNbipolar transistor

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
20
Issue
6
Identifiers
DOI: 10.1016/s0038-1101(77)81012-5

Abstract

Abstract It is shown that N +NPN bipolar transistors exhibit a mechanism of base widening into the lightly-doped emitter region. The critical current density above which this effect occurs is calculated in terms of the device's technological characteristics. An analytic expression is established for the injection efficiency taking account of the base widening effect. The results obtained from this calculation agree very well with those obtained from an exact numerical simulation of the structure's electrical behaviour.

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