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Evidence for Au-Si bonding in liquid gold-silicon alloys from electrical resistivity measurements

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
76
Issue
6
Identifiers
DOI: 10.1016/0038-1098(90)90625-l

Abstract

Abstract A new interpretation is offered for a set of results on the effects of composition and temperature on the electrical resistivity of gold-silicon alloys containing up to 40 at %. silicon published by Hauser, Ray and Tauc (1979). There is an electrical resistivity anomaly centered on 30 at % silicon which is due to the formation of AuSi bonds in the liquid. There already exists evidence for such bonds from specific heat and x-ray diffraction studies. These bonds are preserved in the solid state if a liquid alloy is solidified using a cooling rate greater than 5° C sec −1. Such cooling results in the formation of the compound Au 3Si which dissociates slowly into gold and silicon at room temperature.

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