Abstract A new interpretation is offered for a set of results on the effects of composition and temperature on the electrical resistivity of gold-silicon alloys containing up to 40 at %. silicon published by Hauser, Ray and Tauc (1979). There is an electrical resistivity anomaly centered on 30 at % silicon which is due to the formation of AuSi bonds in the liquid. There already exists evidence for such bonds from specific heat and x-ray diffraction studies. These bonds are preserved in the solid state if a liquid alloy is solidified using a cooling rate greater than 5° C sec −1. Such cooling results in the formation of the compound Au 3Si which dissociates slowly into gold and silicon at room temperature.