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Nanoscale twinning-induced elastic strengthening in silicon carbide nanowires

Authors
Journal
Scripta Materialia
1359-6462
Publisher
Elsevier
Publication Date
Volume
63
Issue
10
Identifiers
DOI: 10.1016/j.scriptamat.2010.07.023
Keywords
  • Nano-Twin
  • High Pressure
  • Synchrotron
  • Silicon Carbide

Abstract

Compressibility of periodically twinned silicon carbide nanowires is studied using in situ high pressure X-ray diffraction. Twinned SiC nanowires displayed a bulk modulus of 316 GPa, ∼20–40% higher than previously reported values for SiC of other morphologies. This finding provides direct evidence of a significant effect of twinned structures on the elastic properties of SiC on the nano scale and supports previous molecular dynamics simulations of twin boundary/stacking fault-induced strengthening. Both experiments and simulations indicate that nanoscale twinning is an effective pathway by which to tailor the mechanical properties of nanostructures.

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