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Critical oxygen partial pressure for the “in-situ” preparation of high Tcsuperconducting thin films

Authors
Journal
Physica C Superconductivity
0921-4534
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/0921-4534(89)90927-1
Disciplines
  • Chemistry

Abstract

Abstract The critical (molecular) partial pressure for the “in-situ” growth of Y 1Ba 2Cu 3O 7−x and Bi 2Sr 2Ca 1Cu 2O 8−y thin films has been determined by an electrochemical method over a temperature range from 560 to 820°C. The results indicate that the critical oxygen partial pressure is mainly determined by the stability of the Cu 2+ state with respect to a reduction process.

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