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Characterization of porous silicon inhomogeneities by high spatial resolution infrared spectroscopy

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
87
Issue
1
Identifiers
DOI: 10.1016/0038-1098(93)90524-q
Disciplines
  • Physics

Abstract

Abstract A detailed analysis of infrared absorption spectra of porous silicon is performed on the basis of high spatial resolution measurements. Microscopic inhomogeneity and a strong influence of storage ambient are observed. Si atoms of the porous silicon surface are found to bind to H, O, C atoms and to CH 3 and OH groups. The presence of free H 2O molecules is also detected.

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