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Raman spectroscopy for impurity characterization in III–V semiconductors

Authors
Journal
Applied Surface Science
0169-4332
Publisher
Elsevier
Publication Date
Volume
50
Identifiers
DOI: 10.1016/0169-4332(91)90142-7

Abstract

Abstract Raman spectroscopy is discussed as a tool for the quantitative assessment of impurities and defects in III-V semiconductors. After a brief discussion of the effect of defects on Raman scattering by intrinsic phonon modes emphasis is laid on the characterization of individual impurities either via scattering by impurity-induced local vibrational modes or via scattering by internal electronic excitations.

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