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Reactivity at interfaces of Cu, Ag and Au-GaSe layered compounds

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
222
Identifiers
DOI: 10.1016/0039-6028(89)90363-4

Abstract

Abstract We have studied the reactivity at interfaces of Cu, Ag and Au-GaSe layered compounds using X-ray photoelectron spectroscopy and low-energy electron energy loss spectroscopy. It is found that a thick Cu overlayer reacts with GaSe at the interface, but Ag and Au make an abrupt junction. The dissociated Se atoms outdiffuse into the Cu overlayer more than the Ga atoms, and form compounds with the Cu atoms. The reversal phenomenon of core level shift with increasing deposition that has been reported to be one of the characteristics of reactive combination is also observed at non reactive Au-GaSe.

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