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An XPS and WF study of theEr Si(100)interface formation

Surface Science
Publication Date
DOI: 10.1016/0039-6028(95)00321-5
  • Growth
  • Lanthanides
  • Metal-Semiconductor Interfaces
  • Silicides
  • Silicon
  • Work Function Measurements
  • X-Ray Photoelectron Spectroscopy


Abstract XPS and work function measurements were used to investigate the Er Si(100) interface formation after Er deposition up to 9 ML between 250 and 500 K and subsequent annealing up to 970 K. Erbium initially adsorbs as isolated adatoms with a dipole moment of 1.1 ± 0.5 D. The ErSi interaction above 1 ML leads to an interface silicide plus an intermixed dilute Si phase extending up to ∼ 5 ML at 370 K. Upon annealing, the intermixed phase becomes more dense in Si, extends up to the surface and eventually turns into a silicide with a WF of 4.8 eV. The XPS results are in agreement with the literature on Er Si(111) and other rare-earth/silicon systems, whereas the WF results demonstrate the usefulness of WF measurements in the study of RE Si interfaces.

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