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Controlling Mn depth profiles in GaMnAs during high-temperature molecular beam epitaxial growth

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
327
Issue
1
Identifiers
DOI: 10.1016/j.jcrysgro.2011.06.023
Keywords
  • A1. Doping
  • A3. Molecular Beam Epitaxy
  • B1. Gallium Compounds
  • B2. Semiconducting Materials

Abstract

Abstract Mn-doped GaAs thin films were grown at a high substrate temperature of 580 °C. During the growth process the Mn cell temperature was ramped at different rates, resulting in a variety of different Mn concentration depth profile slopes, as measured by dynamic secondary ion mass spectrometry (SIMS). Results show that controlling the Mn deposition rate via temperature during molecular beam epitaxy (MBE) growth can mitigate the effect of Mn atoms diffusing toward the surface. Most importantly, the slope of the Mn concentration as a function of depth inside the sample can be tuned from negative to positive.

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