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Sawtoothed line patterns beside the facet and non-facet boundary in pulled GaSb crystals

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
63
Issue
1
Identifiers
DOI: 10.1016/0022-0248(83)90454-2

Abstract

Abstract Line patterns showing a sawtoothed shape were observed in the transition region between a peripheral facet and non-facet growth in pulled GaSb crystals. Every crystal rotation, each line pattern existed at a partial area on the non-facet interface which was inclined at an angle of about 110° or 70° from the facet plane in respective samples grown in the [1̄1̄0] or [1̄1̄1̄] direction. This means that the growth interface formed by a {111} plane occured on the non-facet interface and consequently the impurities of a relatively higher concentration were incorporated locally in the crystal under the facet growth mechanism.

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