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The ordered overlayer growth of germanium on Si(111) (7×7)

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
111
Issue
4
Identifiers
DOI: 10.1016/0040-6090(84)90328-6

Abstract

Abstract Germanium was deposited onto Si(111) (7×7) surfaces heated to 350°C, using a technique similar to molecular beam epitaxy under ultrahigh vacuum conditions. The film growth process and the interface structure were analysed by low energy electron diffraction, Auger electron spectroscopy and photoemission yield spectroscopy. It is shown that such deposition conditions lead to the formation of an ordered germanium overlayer but destroy the interface abruptness: germanium islands build up on an intermediate layer of GeSi alloy. This process is correlated with the interaction mechanism between germanium and silicon atoms.

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