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Light-induced effects in amorphous silicon material and devices

Authors
Journal
Solar Cells
0379-6787
Publisher
Elsevier
Publication Date
Volume
9
Identifiers
DOI: 10.1016/0379-6787(83)90072-8

Abstract

Abstract We have studied the stability of hydrogenated amorphous silicon (a-Si:H) using several new techniques such as diffusion length measurements, photovoltage profiling and IR absorption via multiple internal reflections. We find that prolonged illumination generally causes a decrease in the diffusion length and an increase in the space charge density of undoped a-Si:H films.

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