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Local neutron transmutation doping using isotopically enriched silicon film

Authors
Journal
Journal of Physics and Chemistry of Solids
0022-3697
Publisher
Elsevier
Publication Date
Volume
68
Issue
11
Identifiers
DOI: 10.1016/j.jpcs.2007.08.056

Abstract

Abstract By means of thermal neutron irradiation on nanostructure fabricated from 30Si-enriched material, the nanoregion can be selectively and homogeneously doped with 31P owing to the nuclear transmutation of 30Si→ 31P (local neutron transmutation doping, NTD). In order to demonstrate the capability of local NTD, 30Si-enriched silicon film is fabricated on p-Si(1 0 0) and irradiated by thermal neutrons. Upon the irradiation, film is n-doped while the substrate remains p-type, resulting in a formation of a p–n junction at film–substrate interface showing a rectification. This suggests strong possibility for application of the NTD for nano-scaled semiconductor devices.

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