Affordable Access

Publisher Website

Diffusion of lead in lead sulphide at 700°C

Authors
Journal
Journal of Physics and Chemistry of Solids
0022-3697
Publisher
Elsevier
Publication Date
Volume
24
Issue
12
Identifiers
DOI: 10.1016/0022-3697(63)90093-3

Abstract

Abstract The diffusion of Pb 210 into single crystals of lead sulfide, undoped or containing 2 × 10 19 bismuth/cm 3, has been studied as a function of stoichiometry at 700°C. While it is clear that lead vacancies which act as acceptor centers are the atomic defects responsible for the observed diffusion in the sulfur excess region of the homogeneity range for PbS, the nature of the donor defects is still uncertain. It is suggested that singly ionized sulfur vacancies V' S are the primary donor defects in PbS, but that there is also an appreciable concentration of doubly ionized interstitial lead, Pb″ i .

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments

More articles like this

The12C(p,d)11C reaction at 700MeV

on Physics Letters B Jan 01, 1974

Diffusion of indium into cadmium indium sulphide (...

on Journal of Crystal Growth Jan 01, 1985

Structural study of Sr0.3Ba0.7Nb2O6and La0.030Sr0....

on Materials Chemistry and Physic... Jan 01, 2009
More articles like this..