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Diffusion of lead in lead sulphide at 700°C

Authors
Journal
Journal of Physics and Chemistry of Solids
0022-3697
Publisher
Elsevier
Publication Date
Volume
24
Issue
12
Identifiers
DOI: 10.1016/0022-3697(63)90093-3

Abstract

Abstract The diffusion of Pb 210 into single crystals of lead sulfide, undoped or containing 2 × 10 19 bismuth/cm 3, has been studied as a function of stoichiometry at 700°C. While it is clear that lead vacancies which act as acceptor centers are the atomic defects responsible for the observed diffusion in the sulfur excess region of the homogeneity range for PbS, the nature of the donor defects is still uncertain. It is suggested that singly ionized sulfur vacancies V' S are the primary donor defects in PbS, but that there is also an appreciable concentration of doubly ionized interstitial lead, Pb″ i .

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