Donor defect in P-diffused bulk ZnO single crystal
- Authors
- Publication Date
- Oct 11, 2010
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
- License
- Unknown
- External links
Abstract
A high concentration of shallow donor defect is formed in P-diffused ZnO single crystals. X-ray photoelectron spectroscopy analysis indicates that P atom occupy different lattice site at different diffusion temperature. Nature of the donor defect has been discussed.
