Affordable Access

Dislocation core effect scattering in a quasitriangle potential well

Authors
  • xq, xu
  • liu, xl
  • yang, sy
  • liu, jm
  • wei, hy
  • zhu, qs
  • wang, zg
  • acad, xu xq r chinese
Publication Date
Jan 01, 2009
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
External links

Abstract

A theory of scattering by charged dislocation lines in a quasitriangle potential well of AlxGa1-xN/GaN heterostructures is developed. The dependence of mobility on carrier sheet density and dislocation density is obtained. The results are compared with those obtained from a perfect two-dimensional electron gas and the reason for discrepancy is given.

Report this publication

Statistics

Seen <100 times