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Directionally anisotropic Si nanowires: on-chip nonlinear grating devices in uniform waveguides.

Authors
Type
Published Article
Journal
Optics Letters
1539-4794
Publisher
The Optical Society
Publication Date
Volume
36
Issue
8
Pages
1416–1418
Identifiers
DOI: 10.1364/OL.36.001416
PMID: 21499375
Source
Medline

Abstract

Computational studies are used to show that the crystalline structure of Si causes the waveguide Kerr effective nonlinearity, γ, to vary by 10% for in-plane variation of the orientation of a silicon nanowire waveguide (SiNWG) fabricated on a standard silicon-on-insulator wafer. Our analysis shows that this angular dependence of γ can be employed to form a nonlinear Kerr grating in dimensionally uniform SiNWGs based on either ring resonators or cascaded waveguide bends. The magnitude of the nonlinear index variation in these gratings is found to be sufficient for phase matching in four-wave mixing and other optical parametric processes.

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