Affordable Access

Direct observation of depth-dependent atomic displacements associated with dislocations in gallium nitride.

Authors
  • 1
  • 1
  • 2
  • 3
  • 4
  • 4
  • 5
  • 5
  • 3
  • 2
  • 1
  • 1
  • 1 Department of Materials, University of Oxford, OX1 3PH Oxford, United Kingdom. , (United Kingdom)
  • 2 Departamento de Ingeniería Informática, CASEM, Universidad de Cadiz, Polígono Rio San Pedro s/n, 11510 Puerto Real (Cadiz), Spain. , (Spain)
  • 3 School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia. , (Australia)
  • 4 JEOL Ltd., 1-2 Musashino 3-Chome, Akishima, 196-8558 Tokyo, Japan. , (Japan)
  • 5 Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, CB3 0FS Cambridge, United Kingdom. , (United Kingdom)
Type
Published Article
Journal
Physical Review Letters
1079-7114
Publisher
American Physical Society
Publication Date
Volume
113
Issue
13
Pages
135503–135503
Identifiers
PMID: 25302902
Source
Medline
License
Unknown

Abstract

We demonstrate that the aberration-corrected scanning transmission electron microscope has a sufficiently small depth of field to observe depth-dependent atomic displacements in a crystal. The depth-dependent displacements associated with the Eshelby twist of dislocations in GaN normal to the foil with a screw component of the Burgers vector are directly imaged. We show that these displacements are observed as a rotation of the lattice between images taken in a focal series. From the sense of the rotation, the sign of the screw component can be determined.

Statistics

Seen <100 times