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Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy

Authors
  • Zhang, Zeng1
  • Jackson, Christine M.1
  • Arehart, Aaron R.1
  • McSkimming, Brian2
  • Speck, James S.2
  • Ringel, Steven A.1
  • 1 The Ohio State University, Department of Electrical and Computer Engineering, Columbus, OH, 43210, USA , Columbus (United States)
  • 2 University of California, Materials Department, Santa Barbara, CA, 93106-5050, USA , Santa Barbara (United States)
Type
Published Article
Journal
Journal of Electronic Materials
Publisher
Springer US
Publication Date
Dec 31, 2013
Volume
43
Issue
4
Pages
828–832
Identifiers
DOI: 10.1007/s11664-013-2942-z
Source
Springer Nature
Keywords
License
Yellow

Abstract

The energy band alignments of Ni/Al2O3/GaN heterostructures have been explored by internal photoemission (IPE) and capacitance–voltage (CV) measurements. By performing IPE measurements at both reverse- and forward-bias conditions, the Ni/Al2O3 Schottky barrier is found to be 2.9 ± 0.1 eV with the presence of a strong image force lowering effect, while the Al2O3/GaN conduction-band offset is determined to be 2.2 ± 0.1 eV and is insensitive to oxide electrical field. CV-based flat-band voltage analysis has further been performed on samples with different oxide thicknesses, not only confirming the IPE-measured band alignment but also revealing the presence of 3.0 × 1012 cm-2 net positive charge at the Al2O3/GaN interface.

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