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Diffusion of ion implanted as in Si1-xGex epilayers

Authors
  • zou, lf
  • wang, zg
  • sun, dz
  • fan, tw
  • liu, xf
  • zhang, jw
  • chinese, lf r zou
Publication Date
Jan 01, 1997
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

Diffusion of implanted As ion in relaxed Si1-xGex was studied as a function of Ge content over a wide range of Ge fractions (0-43%) and annealing temperature, and was compared to diffusion in Si. Experimental results showed that the As diffusion is enhanced with increasing annealing temperature for certain Ge content and strongly dependent on the higher Ge content and the faster As diffusion.

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