Affordable Access

Access to the full text

Diffusion and Interaction of In and As Implanted into SiO2 Films

Authors
  • Tyschenko, I. E.
  • Voelskow, M.
  • Mikhaylov, A. N.
  • Tetelbaum, D. I.
Type
Published Article
Journal
Semiconductors
Publisher
Pleiades Publishing
Publication Date
Aug 07, 2019
Volume
53
Issue
8
Pages
1004–1010
Identifiers
DOI: 10.1134/S1063782619080190
Source
Springer Nature
Keywords
License
Yellow

Abstract

AbstractBy means of Rutherford backscattering spectrometry, electron microscopy, and energy-dispersive X-ray spectroscopy, the distribution and interaction of In and As atoms implanted into thermally grown SiO2 films to concentrations of about 1.5 at % are studied in relation to the temperature of subsequent annealing in nitrogen vapors in the range of T = 800–1100°C. It is found that annealing at T = 800–900°C results in the segregation of As atoms at a depth corresponding to the As+-ion range and in the formation of As nanoclusters that serve as sinks for In atoms. An increase in the annealing temperature to 1100°C yields the segregation of In atoms at the surface of SiO2 with the simultaneous enhanced diffusion of As atoms. The corresponding diffusion coefficient is DAs = 3.2 × 10–14 cm2 s–1.

Report this publication

Statistics

Seen <100 times