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Effect of strain on doped graphene-basedN/I/Sjunction withd-wave superconductivity

Authors
Journal
Superlattices and Microstructures
0749-6036
Publisher
Elsevier
Volume
63
Identifiers
DOI: 10.1016/j.spmi.2013.08.010
Keywords
  • Unconventional Superconductivity
  • Strain Graphene
  • Tunneling Conductance
  • Weyl–Dirac Fermions
Disciplines
  • Physics

Abstract

Abstract We investigate the effect of tensional strain on tunneling conductance in graphene-based normal/insulator/superconductor junction taking into account the anisotropic (d-wave asymmetry) superconductor pairing potential. By applying strain in the zigzag direction to graphene sheet, the highly asymmetric velocity of massless Dirac fermions can be provided. To study the conductance behavior based on Blonder–Thinkham–Klapwijk formalism in the d-wave pair coupling case, we must restrict ourselves to the large Fermi energy in the superconductor region, so that the incident angle of quasiparticles of superconductor region can be possible to calculate exactly in terms of modified wavevectors, kx and ky. In particular, investigation of the effect of Fermi energy mismatch in interface shows that it (EFS+U0) causes a reduction in conductance of structure only in the strain direction. In addition, we illustrate how d-type of pairing asymmetry affects the tunneling conductance in quite different behaviors in parallel and perpendicular directions of strain.

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