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90° boundaries and associated interfacial and stand-off partial dislocations in YBa2Cu3O7− x

Authors
Journal
Ultramicroscopy
0304-3991
Publisher
Elsevier
Publication Date
Volume
51
Identifiers
DOI: 10.1016/0304-3991(93)90149-r
Disciplines
  • Chemistry
  • Physics

Abstract

Abstract The 90° rotation boundaries that occur widely in YBa 2Cu 3O 7- x and related oxide superconductors, and which are responsible for the c-⊥ to c-‖ transition in thin films, have been studied by high-resolution transmission electron microscopy. Comparison of image simulations to experimental micrographs allows selection between several models for the atomic structure at the interface. Interfacial misfit discolations with a Burgers vector of 1 3 [001] have been observed. Many of these partial discolations move to stand-off positions in the interfacial grain with c aligned along the boundary, leaving behind a connecting stacking fault. The detachment of the discolations from the interface appears to be driven by chemical non-stoichiometry rather than by mechanical image forces. The epitaxial alignment of Y 2O 3 particles within the film and the presence of a stacking fault connecting one such Y 2O 3 inclusion with a 90° rotation boundary are also discussed.

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