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On the electrical properties and Hall effect behaviour of MOVPE CdxHg1− xTe

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
77
Identifiers
DOI: 10.1016/0022-0248(86)90337-4

Abstract

Abstract The electrical properties of as-grown MOVPE layers of Cd x Hg 1− x Te are discussed in the context of the fundamental and the preparation-dependent parameters which determine their characteristics. A simple model is used to predict the equilibrium vacancy concentration as a function of temperature and Hg pressure in the range 250–430°C. The preparation-dependent parameters associated with substrates, growth and post growth processes are considered with references to experimental examples. The results of both two layer and single layer Hall models are used to illustrate the role surfaces and interfaces and their significance on the measured Hall results.

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