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Development of terahertz electromagnetic wave generation based on nanometer films with atomic accuracy

Authors
  • Nishizawa, J.1
  • Suto, K.2
  • 1 RIKEN, Semiconductor Research Institute, Semiconductor Research Foundation, Japan Photodynamics Research Center, Japan
  • 2 Tohoku University, Department of Materials Science, Japan
Type
Published Article
Journal
Journal of Structural Chemistry
Publisher
Springer-Verlag
Publication Date
Jan 01, 2004
Volume
45
Issue
Suppl 1
Identifiers
DOI: 10.1007/s10947-006-0090-5
Source
Springer Nature
Keywords
License
Yellow

Abstract

The terahertz region is between the optical wave and the so-called microwaves; it had not been studied until 1963, when Nishizawa started the development of a THz wave generation based on the character of lattice or molecular vibrations. In 1979, Raman laser oscillation was realized using GaP, and in 1983, the oscillation of lattice vibration (12 THz) was achieved by mixing with the original wave. Recently, many kinds of oscillators have been developed: LiNbO3 and others for parametric oscillations, TUNNETT diode, so-called Ballistic SIT, etc. These frequencies can induce lattice or molecular vibrations, observable through reflection or transmission. Therefore, terahertz technology is useful for detection of toxins, including bacteria and viruses. It can be applied for investigation of structural changes in molecules, including those caused by disease or medical treatment. At the same time, it can heat up selectively a specified structure of a polymer and, hence, may be used for thermal treatment, or to enhance the reaction with a specific structure, suppressing side effects.

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