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Development of a Si/CdTe semiconductor Compton telescope

Authors
  • Tanaka, Takaaki
  • Mitani, Takefumi
  • Watanabe, Shin
  • Nakazawa, Kazuhiro
  • Oonuki, Kousuke
  • Sato, Goro
  • Takahashi, Tadayuki
  • Tamura, Ken'ichi
  • Tajima, Hiroyasu
  • Nakamura, Hidehito
  • Nomachi, Masaharu
  • Nakamoto, Tatsuya
  • Fukazawa, Yasushi
Type
Preprint
Publication Date
Oct 03, 2004
Submission Date
Oct 03, 2004
Identifiers
DOI: 10.1117/12.552600
Source
arXiv
License
Unknown
External links

Abstract

We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9 degrees and 5.7 degrees at 122 keV and 356 keV, respectively.

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