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Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy

  • yang, al
  • song, hp
  • liu, xl
  • wei, hy
  • guo, y
  • zheng, gl
  • jiao, cm
  • yang, sy
  • zhu, qs
  • wang, zg
  • al chinese, r yang
Publication Date
Jan 01, 2009
Knowledge Repository of SEMI,CAS
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MgO is a promising gate dielectric and surface passivation film for GaN/AlGaN transistors, but little is known of the band offsets in the MgO/AlN system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (Delta E-v) of MgO/AlN heterostructures. A value of Delta E-v=0.22 +/- 0.08 eV was obtained. Given the experimental band gap of 7.83 eV for MgO, a type-I heterojunction with a conduction band offset of similar to 1.45 eV is found. The accurate determination of the valence and conduction band offsets is important for use of III-N alloys based electronic devices.

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