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Detection of terahertz/sub-terahertz radiation by asymmetrically-shaped 2DEG layers

Authors
  • Seliuta, D.
  • Sirmulis, E.
  • Tamosiunas, V.
  • Balakauskas, S.
  • Asmontas, S.
  • Suziedelis, A.
  • Gradauskas, J.
  • Valusis, G.
  • Lisauskas, A.
  • Roskos, H.G.
  • Köhler, K.
Publication Date
Jan 01, 2004
Source
Fraunhofer-ePrints
Keywords
Language
English
License
Unknown
External links

Abstract

A diode structure to detect THz/subTHz radiation based on an MBE-grown modulation-doped GaAs/Al(0.25)Ga(0.75)As structure is proposed. Devices have an asymmetrically-shaped geometrical from in the plane of the structure and are fabricated as mesas of 2 µm depth by wet etching. The incident terahertz/sub-terahertz radiation induces a voltage signal over the ends of the sample. Detection by non-uniform carrier heating effects under external illumination is explained and the devices operation from 10 GHz up to 2.52 THz at room temperature is demonstrated.

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