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Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology

Authors
  • Martins, E.
  • Gomes, M. V G
  • Bastida, E. M.
  • Swart, J. W.
Publication Date
Dec 01, 1999
Source
Repositório Institucional UNESP
Keywords
Language
English
License
Unknown
External links

Abstract

The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.

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