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Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology

Publication Date
Repositório Institucional UNESP
  • Front End Receivers
  • Gilbert Cell Mixers
  • Low Noise Amplifiers
  • Pseudomorphic High Electron Mobility Transistors
  • Amplifiers (Electronic)
  • Buffer Circuits
  • Computer Simulation
  • Electric Network Topology
  • High Electron Mobility Transistors
  • Mixer Circuits
  • Monolithic Microwave Integrated Circuits
  • Semiconducting Gallium Arsenide
  • Signal Receivers
  • Integrated Circuit Layout
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The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.

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