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Density-functional theory study of half-metallic heterostructures: interstitial Mn in Si

Authors
  • Wu, Hua
  • Kratzer, Peter
  • Scheffler, Matthias
Type
Published Article
Publication Date
Feb 08, 2007
Submission Date
Feb 08, 2007
Identifiers
DOI: 10.1103/PhysRevLett.98.117202
arXiv ID: cond-mat/0702200
Source
arXiv
License
Unknown
External links

Abstract

Using density-functional theory within the generalized gradient approximation, we show that Si-based heterostructures with 1/4 layer $\delta$-doping of {\em interstitial} Mn (Mn$_{\mathrm int}$) are half-metallic. For Mn$_{\mathrm int}$ concentrations of 1/2 or 1 layer, the states induced in the band gap of $\delta$-doped heterostructures still display high spin polarization, about 85% and 60%, respectively. The proposed heterostructures are more stable than previously assumed $\delta$-layers of {\em substitutional} Mn. Contrary to wide-spread belief, the present study demonstrates that {\em interstitial} Mn can be utilized to tune the magnetic properties of Si, and thus provides a new clue for Si-based spintronics materials.

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