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Delta Doped beta-Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

Authors
  • XIA, ZB
  • JOISHI, C
  • KRISHNAMOORTHY, S
  • BAJAJ, S
  • ZHANG, YW
  • BRENNER, M
  • LODHA, S
  • RAJAN, S
Publication Date
Dec 03, 2018
Source
DSpace at IIT Bombay
Keywords
License
Unknown
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Abstract

We report silicon delta-doped beta-Ga2O3 metal semiconductor field effect transistors (MESFETs) with source-drain ohmic contacts formed by patterned regrowth of n-type Ga2O3. We show that regrown n-type contacts can enable a lateral low-resistance contact to the two-dimensional electron gas channel, with contact resistance lower than 1.5 Omega-mm. The fabricated MESFET has a peak drain current (I-D,I-MAX) of 140 mA/mm, transconductance (g(m)) of 34 mS/mm, and 3-terminal off-state breakdown voltage of 170 V. The proposed device structure could provide a promising path towards vertically scaled beta-Ga2O3 field effect transistors.

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