Affordable Access

The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures

Authors
Publisher
American Institute of Physics
Publication Date
Disciplines
  • Physics

Abstract

The effect of the growth interruption time during the growth of InGaAs/InAlAs quantum well structures is shown to have a significant effect on both the interband transitions, as determined by photoreflectance, and the electrical properties of the as-grown structure. The results show that, for increasing growth interruption time, the quantum well heterointerfaces become more abrupt and the carrier mobility increases, thereby demonstrating that long interruption times are preferable for the growth of high quality rectangular quantum well structures.

There are no comments yet on this publication. Be the first to share your thoughts.