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Resist pattern peeling assessment in DUV chemically amplified resist

Authors
Journal
Microelectronics Journal
0026-2692
Publisher
Elsevier
Publication Date
Volume
35
Issue
5
Identifiers
DOI: 10.1016/j.mejo.2004.01.003
Keywords
  • Acidic Bottom Antireflective Coating
  • Post-Exposure Bake
  • Under Cut
  • Pattern Peeling
Disciplines
  • Chemistry
  • Ecology
  • Geography

Abstract

Abstract As device size shrinks resist line peeling becomes more challenging. In this paper we studied the resist pattern peeling based on resist processing parameters and type of bottom antireflective coating (BARC), for patterning trench structures with different duty ratios, in copper and low k dual damascene process. To minimize resist poisoning in dual damascene process, acetal-based resist was used. Significant improvement in via poisoning was observed with this chemistry as compared to environmentally stable chemically amplified resist chemistry but at the cost of pattern peeling. In order to solve pattern peeling problem we tried to analyze key factors such as compatibility with BARC, post-exposure bake, BARC curing, adhesion and their effects. Pitch dependency on pattern peeling margin is observed.

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