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Effect of Thermal Annealing on Carbon in In-situ Phosphorous-Doped Si1-xCxfilms

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
520
Issue
8
Identifiers
DOI: 10.1016/j.tsf.2011.10.097
Keywords
  • Silicon-Carbon
  • Phosphorous
  • Chemical Vapor Deposition
  • Rpcvd
  • Carbon
  • Laser Annealing
Disciplines
  • Chemistry

Abstract

Abstract The effect of thermal heat treatment on carbon in in-situ phosphorous-doped silicon-carbon is studied as a function of annealing temperature and type. Films of 0 to 2% carbon were deposited using cyclic chemical vapor deposition at reduced pressures. Secondary ion-mass spectroscopy and high-resolution X-ray diffraction were employed to extract the total and substitutional carbon concentration in samples with phosphorous levels of mid-1020cm-3. It was found that millisecond laser annealing drastically improves substitutionality while high thermal budget treatments (furnace, rapid-thermal, or spike annealing) resulted in an almost complete loss of substitutional carbon, independent of preceding or subsequent laser heat treatments.

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