Affordable Access

Publisher Website

Specific heat of n-type Bi2Te3from 1.3 to 90 °K

Authors
Journal
Physics Letters A
0375-9601
Publisher
Elsevier
Publication Date
Volume
27
Issue
1
Identifiers
DOI: 10.1016/0375-9601(68)91328-5

Abstract

Abstract The heat capacity of n-type Bi 2Te 3 with carrier concentrations of 1.9 × 10 18 cm -3 and 1.9 × 10 19 cm -3 has been measured from 1.3 to 90 °K. At low temperatures there is a measurable difference in the electronic specific heat of the two samples. This difference confirms the existence of a heavy mass conduction band postulated previously to explain the concentration dependence of the De Haas-Van Alphen effect in n-type Bi 2Te 3. No limiting T 3 dependence of the lattice specific heat is observed down to the lowest temperatures measured.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments