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Specific heat of n-type Bi2Te3from 1.3 to 90 °K

Authors
Journal
Physics Letters A
0375-9601
Publisher
Elsevier
Publication Date
Volume
27
Issue
1
Identifiers
DOI: 10.1016/0375-9601(68)91328-5

Abstract

Abstract The heat capacity of n-type Bi 2Te 3 with carrier concentrations of 1.9 × 10 18 cm -3 and 1.9 × 10 19 cm -3 has been measured from 1.3 to 90 °K. At low temperatures there is a measurable difference in the electronic specific heat of the two samples. This difference confirms the existence of a heavy mass conduction band postulated previously to explain the concentration dependence of the De Haas-Van Alphen effect in n-type Bi 2Te 3. No limiting T 3 dependence of the lattice specific heat is observed down to the lowest temperatures measured.

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