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Nanofabrication with proximal probes

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/0039-6028(96)00553-5
Keywords
  • Atomic Force Microscopy
  • Etching
  • Field Effect
  • Oxidation
  • Semiconducting Surfaces
  • Semiconductor-Insulator Interfaces
  • Silicon
  • Silicon Oxides

Abstract

Abstract We report the fabrication of nanometer-scale Si structures using an atomic force microscope. A conducting AFM tip was used to write nanometer-scale oxide patterns by the local anodic oxidation of a passivated Si(100) surface. These oxide patterns were used as masks for selective etching of the silicon to form the completed structures. Side-gated Si field effect transistors with critical features as small as 30 nm have been fabricated by this method.

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