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Growth of Bi-2212 single crystals by a horizontal Bridgman method using different oxygen pressure

Authors
Journal
Physica C Superconductivity
0921-4534
Publisher
Elsevier
Publication Date
Volume
469
Identifiers
DOI: 10.1016/j.physc.2009.05.240
Keywords
  • Bi-2212 Single Crystal
  • Horizontal Bridgman Method
  • Crystal Growth
  • Oxygen Pressure

Abstract

Abstract We compared the crystallinity of the Bi-2212 single crystals grown by the horizontal Bridgman (HB) method with those grown by the vertical Bridgman (VB) method in terms of resistivity, ρ. It was clarified that crystals far inside the ingot grown by HB method showed the equivalent crystallinity to crystals grown by VB method, whereas crystals near the surface of the ingot grown by HB method showed the similar crystallinity to crystals grown by TSFZ method, which is sensitive to the growth atmosphere.

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