Abstract The usefulness of the continuum potential approximation for the study of ion implantation in Si crystals has been investigated. The results of range profile and some selected trajectories in proton-Si〈110〉 channeling using the continuum potential to approximate the ion-atom interaction in the channel are compared with the Crystal-TRIM code. The agreement is excellent overall. The weaknesses of the continuum potential method are pointed out. The applicability of this method to the cases with heavier projectile, e.g., B, P, or As, is discussed.