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High voltage characteristics of resurfed Schottky injection FETs

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
32
Issue
4
Identifiers
DOI: 10.1016/0038-1101(89)90082-8
Disciplines
  • Design

Abstract

Abstract The design, fabrication, and characterization of high-voltage ’resurfed” Schottky INjection FETs (SINFET) are discussed in this paper. The devices are fabricated using a polysilicon gate LDMOS high voltage process, and have a forward breakdown voltage of 475 V and a current handling capability twice that of comparable conventional LDMOST. It was demonstrated that the high forward blocking capability of the resurfed SINFET does not degrade the fast switching characteristics, and that the tradeoff between the current handling capability and the forward blocking capability is similar to that of conventional LDMOS transistor.

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