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High-temperature surface structure transitions and growth of α-SiC (0001) in ultrahigh vacuum

Materials Science and Engineering B
Publication Date
DOI: 10.1016/s0921-5107(98)00486-3
  • α-Sic (0001)
  • Gas Source Molecular Beam Epitaxy
  • High-Temperature Surface Structure Transitions
  • Rheed


Abstract Surface structure transitions during SiC growth on α-SiC (0001) in a high vacuum were studied based on an in-situ RHEED observation. An α-SiC (3×3) structure formed by adsorbed Si atoms changed to a (1×1) structure above 1150°C, and the reversible transition from the (1×1) to (3×3) at the temperature was newly observed. Step-flow growth was observed on the (1×1) structure leading to α-SiC homoepitaxy and two-dimensional growth on the (3×3) structure leading to β-SiC growth. Activation energies of about 6.9 and 29 kcal mol −1 were obtained in the step-flow growth region of α-SiC and two-dimensional growth region of β-SiC, respectively. Based on these results, growth mechanisms on the α-SiC (0001) are discussed.

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