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Studies of porous polyacenic semiconductors toward application I. Preparation and structural analysis

Authors
Journal
Synthetic Metals
0379-6779
Publisher
Elsevier
Publication Date
Volume
38
Issue
2
Identifiers
DOI: 10.1016/0379-6779(90)90101-p

Abstract

Abstract A detailed description of the preparation of porous polyacenic semiconductor (PAS) materials is reported. The structural analyses of these materials by the combination of mercury porosimetry and adsorption isotherm measurements have revealed that there are two kinds of pores distinguished by their radii therein. The smaller pore (micropore) size of the porous PAS sample prepared by specific pyrolysis temperature is estimated as about 5 Å being much larger than those of active carbons and, hence, rationalizes the ‘dopability’ of the present sample with bulky dopants already reported.

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