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New developments on the Surrey microbeam applications to lithography

Authors
Journal
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
0168-583X
Publisher
Elsevier
Publication Date
Volume
231
Identifiers
DOI: 10.1016/j.nimb.2005.01.095
Keywords
  • Proton Beam Lithography
  • Gaas
  • Pmma

Abstract

Abstract Investigations using MeV protons for lithography applications are being performed at the Ion Beam Centre of the University of Surrey, UK. High aspect ratio three dimensional structures have been produced by protons in gallium arsenide (GaAs) and Poly(methyl methacrylate) (PMMA). Structures produced in PMMA require significantly lower fluences than GaAs and behave positively to etching, whereas GaAs shows a negative behaviour. Variable fluence studies on GaAs show a transition from low to high aspect ratio three dimensional structures as the fluence increases.

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