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A simplified analysis of the electronic contribution to the elastic constants in ultrathin films of stressed semiconductors under magnetic quantization

Authors
Journal
Physics Letters A
0375-9601
Publisher
Elsevier
Publication Date
Volume
282
Issue
6
Identifiers
DOI: 10.1016/s0375-9601(01)00079-2
Disciplines
  • Physics

Abstract

Abstract An attempt is made to study the electronic contribution to the second- and third-order elastic constants in ultrathin films of strained semiconductors under magnetic quantization in the presence of broadening on the basis of a newly formulated electron dispersion law. It is found, taking stressed n-InSb as an example, that the carrier contribution to the second- and third-order elastic constants oscillates with increasing carrier degeneracy and decreasing film thickness, respectively, in different manners and the stress enhances their numerical values. A relationship between the said contributions and the thermoelectric power has been derived for quantum confined semiconductors having arbitrary dispersion laws and our analysis agrees quite well with the suggested relationship.

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