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Lead zirconate titanate thin films prepared on metal substrates by the sol–gel methods

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
515
Issue
4
Identifiers
DOI: 10.1016/j.tsf.2006.05.001
Keywords
  • Dielectric Properties
  • Pzt Thin Films
  • Metal Substrates
  • Lanio3Buffer Layers
  • Sol–Gel Methods

Abstract

Abstract Pb(Zr 0.53Ti 0.47)O 3 (PZT) thin films with thickness near 0.8 μm were prepared on LaNiO 3 buffered Ti, NiCr and stainless steel (SS) substrates by the sol–gel methods. PZT thin films crystallized into the perovskite structure at temperatures of ≥550 °C. The room-temperature dielectric constant, tan δ, remnant polarization and coercive field achieved of 433, 0.03, 20 μC/cm 2 and 50 kV/cm, respectively, for PZT thin films prepared on the NiCr substrate. The Curie temperature of PZT thin films on Ti, NiCr and SS was determined to be 330, 360 and 410 °C, respectively.

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